THE DEVELOPMENT OF SURFACE MORPHOLOGY DURING SPUTTERING WITH SPATIALLY NON-UNIFORM ION BEAMSNOBES MJ; WEBB RP; CARTER G et al.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 50; NO 3-6; PP. 133-138; BIBL. 14 REF.Article

MULTI-APERTURE ION SOURCE WITH A DEFLECTABLE FOCUSED BEAM FOR COMPOSITIONAL CONTROL IN SPUTTER DEPOSITIONSMITS JW.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 3; PP. 704-708; BIBL. 11 REF.Article

BROAD BEAM ION SOURCE OPERATION WITH FOUR COMMON GASESPAK S; SITES JR.1980; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1980; VOL. 51; NO 4; PP. 536-539; BIBL. 16 REF.Article

MASS SPECTROMETRY APPLIED TO A REACTIVE ION MILLDENNISON RW.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 9; PP. 117-120; BIBL. 12 REF.Article

MOLECULAR EROSION OF ICE BY KEV ION BOMBARDMENTCIAVOLA G; FOTI G; TORRISI L et al.1982; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1982; VOL. 65; NO 1-4; PP. 167-172; BIBL. 11 REF.Article

HIGH RATE SPUTTERING TECHNIQUES = TECHNIQUES PULVERISATION A GRANDE VITESSETHORNTON JA.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 80; NO 1-3; PP. 1-11; BIBL. 46 REF.Conference Paper

ION BEAM ETCHING WITH REACTIVE GASESBOLLINGER LD.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 1; PP. 99-108; BIBL. 15 REF.Article

ION-INDUCED AMORPHOUS AND CRYSTALLINE PHASE FORMATION IN AL/NI, AL/PD, AND AL/PT THIN FILMSHUNG LS; NASTASI M; GYULAI J et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 672-674; BIBL. 9 REF.Article

THE STEP COVERAGE OF UNDOPED AND PHOSPHORUS-DOPED SIO₂ GLASS FILMSLEVIN RM; EVANS LUTTERODT K.1983; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B: MICROELECTRONICS PROCESSING AND PHENOMENA; ISSN 512982; USA; DA. 1983; VOL. 1; NO 1; PP. 54-61; BIBL. 41 REF.Article

INFLUENCE DE LA REFRACTION DU FAISCEAU IONIQUE A LA LIMITE DU CHAMP ELECTRIQUE DANS UN SPECTROGRAPHE DE MASSES A SOURCE IONIQUE A LASERBORISKIN AI; BRYUKHANOV AS; BYKOVSKIJ YU A et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 351-354; BIBL. 10 REF.Article

ION PROJECTION MICROLITHOGRAPHYSTENGL G; KAITNA R; LOSCHNER H et al.1982; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 8; PP. 104-109; BIBL. 45 REF.Article

SURFACE COATING BY IONIC BOMBARDMENT = DEPOT PAR BOMBARDEMENT IONIQUE1982; SURFG J.; ISSN 0307-7365; GBR; DA. 1982; VOL. 13; NO 1; PP. 14-17; LOC. ISArticle

AN ION (GA) BEAM EXPOSUREKUWANO H.1982; BULLETIN OF THE JAPAN SOCIETY OF PRECISION ENGINEERING; ISSN 0582-4206; JPN; DA. 1982; VOL. 16; NO 4; PP. 273-274; BIBL. 3 REF.Article

ION BEAM MILLING AS A DIAGNOSTIC FOR OPTICAL COATINGSHERRMANN WC JR; MCNEIL JR.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 11; PP. 1899-1901; BIBL. 3 REF.Article

COMPENSATION IONIQUE DANS LES FAISCEAUX ELECTRONIQUES HELICOIDAUXVARENTSOV VA; TSIMRING SH E.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 264-269; BIBL. 10 REF.Article

HEAVY ION BEAM DRIVEN INERTIAL CONFINEMENT FUSION TARGET STUDIES AND REACTOR CHAMBER NEUTRONIC ANALYSISFROEHLICH R; GOEL B; HENDERSON DL et al.1982; NUCLEAR ENGINEERING AND DESIGN; ISSN 0029-5493; NLD; DA. 1982; VOL. 73; NO 2; PP. 201-222; BIBL. 75 REF.Article

IMPROVED DRY ETCHING RESISTANCE OF ELECTRON-BEAM RESIST BY ION EXPOSURE PROCESSMOCHIJI K; WADA Y; OBAYASHI H et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2556-2559; BIBL. 9 REF.Article

ION-BEAM-INDUCED-CURRENT (IBIC) MONITORING OF UNIFORM AND SELECTIVE ION-ETCHING PROCESSES IN LAYERED STRUCTURESSAKAKI H; SEKIGUCHI Y; YOKOYAMA K et al.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 1; PP. 23-27; BIBL. 5 REF.Article

THE STRUCTURE OF ALUMINUM BRONZE COATINGS DEPOSITED BY ION PLATINGMINNI E; SUNDQUIST H.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 80; NO 1-3; PP. 55-61; BIBL. 6 REF.Conference Paper

ION-BEAM SHADOW PRINTING THROUGH THIN SILICON FOILS USING CHANNELINGCSEPREGI L; IBERL F; EICHINGER P et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 7; PP. 630-632; BIBL. 14 REF.Article

NEUTRALISED ION BEAM MILLING: ANOMALOUS SPUTTER YIELD BEHAVIOURPITT CW; SPINGH SP.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 19; PP. 721-722; BIBL. 12 REF.Article

RADIATION DAMAGE ESTIMATES AND CONTROL IN ION-BEAM LITHOGRAPHYGALLOWAY KF.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 8; PP. 1862-1864; BIBL. 9 REF.Article

A NEW PRODUCTION TECHNIQUE: ION MILLING. II: APPLICATIONSBOLLINGER D; FINK R.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 12; PP. 97-103; BIBL. 10 REF.Article

BEAMLET STEERING HY APERTURE DISPLACEMENT IN ION SOURCES WITH LARGE ACCELERATION-DECELERATION RATIOCONRAD JR.1980; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1980; VOL. 51; NO 4; PP. 418-424; BIBL. 12 REF.Article

PROCEEDINGS/IPAT 79, ION PLATING AND ALLIED TECHNIQUES, INTERNATIONAL CONFERENCE, LONDON, JULY 1979 = DEPOTS PAR BOMBARDEMENT IONIQUE ET TECHNIQUES SIMILAIRES, CONFERENCE INTERNATIONALE, LONDRES, JUILLET 19791979; IPAT 79. ION PLATING AND ALLIED TECHNIQUES. INTERNATIONAL CONFERENCE./1979-07/LONDRES; GBR; EDINBURGH: CEP CONSULTANTS; DA. 1979; V-283 P.: ILL.; 30 CM; BIBL. DISSEM.Conference Proceedings